PolarHT TM
Power MOSFET
IXTQ 140N10P
IXTT 140N10P
V DSS
I D25
R DS(on)
=
=
100 V
140 A
11 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
I D25
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
100
100
± 20
± 30
140
V
V
V
V
A
TO-3P (IXTQ)
I D(RMS)
I DM
External lead current limit
T C = 25 ° C, pulse width limited by T JM
75
300
A
A
G
D
S
(TAB)
I AR
T C = 25 ° C
60
A
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
80
2.5
10
mJ
J
V/ns
TO-268 (IXTT)
P D
T J
T JM
T stg
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
600
-55 ... +175
175
-55 ... +150
W
° C
° C
° C
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
International standard packages
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
Features
l
M d
Weight
Mounting torque
TO-3P
TO-268
(TO-3P)
1.13/10 Nm/lb.in.
5.5 g
5.0 g
l
l
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Advantages
BV DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
100
3.0
5.0
V
V
l
l
l
Easy to mount
Space savings
High power density
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
I DSS
V DS = V DSS
V GS = 0 V
T J = 175 ° C
25
500
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
V GS = 15 V, I D = 300 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
9
11
m ?
m ?
? 2006 IXYS All rights reserved
DS99133E(12/05)
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